Free-Standing Si and Ge, and Ge/Si Core-Shell Semiconductor Nanowires
H. Peelaersa, b, B. Partoens a and F.M. Peeters a
aUniversiteit Antwerpen, Departement Fysica, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
bMaterials Department, University of California, Santa Barbara, CA 93106-5050, USA
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The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.
DOI: 10.12693/APhysPolA.122.294
PACS numbers: 61.46.Km, 61.72.uf, 62.23.Hj, 63.22.Gh