Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films |
| A. Bagheri Khatibania, S.M. Rozatib and Z. Bargbidib
aIslamic Azad University, Lahijan Branch, P.O. Box 1616, Lahijan, Iran bPhysics Department, University of Guilan, Rasht 41335, Iran |
| Received: April 20, 2011; revised version January 15, 2012; in final form February 21, 2012 |
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| Indium oxide (In2O3) thin films were deposited on glass substrate by varying substrate temperature in the range of 400-600°C using the spray pyrolysis technique. In this research, physical properties of indium oxide thin films were studied and then nanocrystalline sizes at different substrate temperature were deeply compared and investigated. All films were characterized at room temperature using X-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence, the Hall effect and UV-visible spectrophotometer. The optimal substrate temperature to obtain films of high crystallographic quality was 575°C, for this temperature, the electrical resistivity was in the order of ρ=0.147 Ω cm. For comparing optical transmittance and electrical conductivity the best figure of merit of the films was achieved at 575°C. |
| DOI: 10.12693/APhysPolA.122.220 PACS numbers: 81.07.-b, 78.66.-w |