Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
M.W. Gutowskia, W. Stefanowicz a, O. Proselkov a, M. Sawicki a, R. Żuberek a and J. Sadowskia, b
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
bMAX-lab, Lund University, Lund, Sweden
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In this work we report results of ferromagnetic resonance studies of a 6% 15 nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from [110] to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, Heff (=4π M-H2⊥), H2∥ , and H4∥ . In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.
DOI: 10.12693/APhysPolA.121.1228
PACS numbers: 07.05.Kf, 68.47.Fg, 75.30.Gw, 75.50.Pp, 75.70.-i, 75.70.Ak, 75.70.Cn, 75.70.Rf, 76.50.+g