Electrical Resistivity and Electronic Structure of the TbxGd1-xNi3 System |
| G. Chełkowska, A. Bajorek, A. Chrobak and M. Kwiecień-Grudziecka
August Chełkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland |
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| In the paper the electric properties and electronic structure of the intermetallic TbxGd1-xNi3 compounds are presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature (TC) and the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in ρ(T) have been analyzed. Moreover, the reduced form: of the electrical resistivity ρZ (T - T0) indicates a deviation from the linearity for x > 0.2. This kind of behaviour can be attributed to density of d states near by the Fermi level (EF) which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the influence of Tb/Gd substitution on the electronic structure. |
| DOI: 10.12693/APhysPolA.121.1139 PACS numbers: 71.20.Eh, 71.20.Lp, 72.15.-v, 72.10.Di, 79.60.-i |