Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE |
| A. Wierzbicka, Z.R. Żytkiewicz, M. Sobańska, K. Kłosek, E. Łusakowska
Institute of Physics Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland |
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| Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate. |
| DOI: 10.12693/APhysPolA.121.899 PACS numbers: 61.05.cp, 61.05.cm, 81.15.Hi, 68.55.-a |