Transport Properties of Nitrided VN-SiO2 Sol-Gel Derived Films |
| B. Kościelska
Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Narutowicza 11/12, 80-233 Gdańsk, Poland |
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| This work presents transport properties of xVN-(100-x)SiO2 (where x = 90, 80, 70, 60 mol%) films. The films were prepared by thermal nitridation of sol-gel derived V2O3-SiO2 (in proper molar ratio) coatings. The coatings obtained by sol-gel method are especially suitable for the ammonolysis because of their porosity. The microporous structure allows both a significant incorporation of nitrogen and its distribution through the film. The nitridation process of V2O3-SiO2 coatings leads to the formation of disordered structures, with VN metallic grains dispersed in the matrix of insulating SiO2. The critical temperatures of the superconducting transition of the samples Tconset are about 7.5 K. |
| DOI: 10.12693/APhysPolA.121.744 PACS numbers: 81.20.Fw, 74.78.-w, 74.70.Ad |