ACTA

Electrical Properties of InP Crystals with Inhomogeneities Regions

N. Kekelidze^{a, b, c}, D. Kekelidze^a, L. Milovanova^a, E. Khutsishvili^c, Z. Davitaya^a, B. Kvirkvelia^a and D. Khomasuridze^b
^aIv. Javakhishvili Tbilisi State University, I. Chavchavadze Ave., 0179 Tbilisi, Georgia
^bGeorgian Technical University, 77 Kostava Str., 0171 Tbilisi, Georgia
^cFerdinand Tavadze Institute of Metallurgy and Materials Science, 15 Kazbegi Str., 0160 Tbilisi, Georgia

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The parameters of potential well, which arises around inhomogeneities of technological origin in n-InP, have been analyzed using electrical measurements data. Model of spherical space-charge regions surrounding disordered regions was applied for explanation of results and found to be in fair agreement with experimental data. Comparison of experimental data with theoretical computations displays scattering of current carriers due to the disordered regions in n-InP additional to lattice and impurity ions scattering.

DOI: 10.12693/APhysPolA.121.27
PACS numbers: 73.61.Ey, 72.80.Ey, 72.20.My, 72.80.Ng, 72.20.Dp