Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method |
| M.S. Kima, K.G. Yima, S. Kimb, G. Namb, D.-Y. Leec, Jin Soo Kimd, Jong Su Kime and J.-Y. Leema, b
aDepartment of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea bSchool of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea cEpi R&D team, Samsung LED Co. Ltd., Suwon, Gyeonggi-do 443-373, Republic of Korea dResearch Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju, Chonbuk 561-756, Republic of Korea eDepartment of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749, Republic of Korea |
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| Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (EU) was changed inversely with optical band gap of the indium-doped ZnO thin films. |
| DOI: 10.12693/APhysPolA.121.217 PACS numbers: 81.05.Dz, 81.20.Fw, 78.66.Hf |