Some Recent Results on the 3C-SiC Structural Defects
A. Mantzari, A. Andreadou, M. Marinova and E.K. Polychroniadis
Department of Physics, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece
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This work presents some recent results on the 3C-SiC structural defects, studied by transmission electron microscopy. The samples were grown in several laboratories, using different methods. There has always been special attention to the region close to the interface between the seed and the overgrown material. This is due to the fact that this region is very important to the evolution of defects during growth. The main defects in SiC are micropipes, double position boundaries, stacking faults and dislocations. The defects that are most frequently observed in 3C-SiC and more difficult to eliminate are inclusions of other polytypes, twins and microtwins and mainly stacking faults.
DOI: 10.12693/APhysPolA.121.187
PACS numbers: 68.37.Lp, 68.37.Og, 61.72.Nn, 61.72.Mm