ZnO Thin Films Synthesized by Sol-Gel Process for Photonic Applications |
L. Znaidia, T. Touamb, D. Vrela, N. Soudeda, S. Ben Yahiaa, O. Brinzaa, A. Fischerb and A. Boudriouab
aLaboratoire des Sciences des Procédés et des Matériaux, CNRS/UPR 3407, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France bLaboratoire de Physique des Lasers, CNRS/UMR 7538, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France |
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Undoped and aluminum-doped ZnO thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol and monoethanolamine are used as precursor, solvent and stabilizer, respectively. In the case of Al-doped ZnO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 or 2 at.% Al. The multi thin layers are prepared by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550°C. Films with preferential orientation along the c-axis are successfully obtained. The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated for different elaboration parameters (e.g. layer number) using X-ray diffraction, atomic force microscopy, scanning electronic microscopy. Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that our films are monomodes at 632.8 nm with propagation optical loss estimated around 1.6 dB/cm. |
DOI: 10.12693/APhysPolA.121.165 PACS numbers: 81.20.Fw, 61.46.-w, 78.20.-e |