Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor
Y.Y. Illarionova, b, M.I. Vexlera, S.M. Suturina, V.V. Fedorova and N.S. Sokolova
aIoffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
bGrenoble Institute of Technology, 46 av. Felix Viallet, 38031 Grenoble, France
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Owing to the optimized growth technology of the 1-2 nm calcium fluoride films on n-(111)-silicon, metal/-tunnel-insulator/-semiconductor phototransistors have been fabricated by the molecular beam epitaxy at the temperature 250°C. The characteristics of these transistors were measured in a wide range of voltages, and the proofs for current gain were found throughout the investigated range. The gain value exceeds 103 approaching the theoretically estimated value in this system. The stability and reproducibility of the device characteristics were satisfactory. The results support the candidacy of calcium fluoride for being a vital dielectric in silicon-based functional electronics.
DOI: 10.12693/APhysPolA.121.158
PACS numbers: 73.40.Qv, 73.40.Gk, 73.61.Ng