A Photoacoustic Study of Xenon Implantation in CuInSe2
F.Z. Satoura, A. Zegadia and A. Merabetb
aLCCNS, Département d'Electronique, Faculté de Technologie, Université Ferhat Abbas - Sétif, Sétif 19000, Algeria
bLPMMM, I.O.M.P., Université Ferhat Abbas - Sétif, Sétif 19000, Algeria
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In this paper, we report a study on the optical properties of xenon ion implanted CuInSe2 single crystals using a high resolution near-infrared photoacoustic spectrometer of the gas-microphone type. Samples of high quality of CuInSe2, p-type conducting, have been implanted with Xe+ at 40 keV with doses of 5 × 1015, 1016 and 5 × 1016 ions/cm2. Photoacoustic spectra have been measured before and after implantation. A newly developed theoretical model based on a two-layer sample configuration has been used to single out the spectral dependence of the absorption coefficient of the implanted layer from that of the substrate. The absorption spectra were used to evaluate the gap energy and to establish ionization energies for several shallow and deep defect states. The resulting effects following the introduction of xenon into CuInSe2 at different doses are discussed in the light of published literature.
DOI: 10.12693/APhysPolA.120.A-31
PACS numbers: 81.70.Cv, 78.20.Ci, 78.40.Fy, 61.82.Fk, 71.55.-i