Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
Y. Ishikawaa, Y. Yaoa, K. Satoa, Y. Sugawaraa, K. Dannob, H. Suzukib, T. Besshob, Y. Kawaib and N. Shibataa
aJapan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
bToyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
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Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form: round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
DOI: 10.12693/APhysPolA.120.A-25
PACS numbers: 61.72.uj, 81.65.Cf, 68.37.Lp