ACTA

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

T.A. Krajewski^a, G. Luka^a, P.S. Smertenko^b, A.J. Zakrzewski^{a, c}, K. Dybko^a, R. Jakiela^a, L. Wachnicki^a, S. Gieraltowska^a, B.S. Witkowski^a, M. Godlewski^{a, c} and E. Guziewicz^a
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bInstitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauki 45, 03028 Kyiv, Ukraine
^cDepartment of Mathematics and Natural Sciences College of Science, Cardinal Stefan Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

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The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.

DOI: 10.12693/APhysPolA.120.A-17
PACS numbers: 68.55.ag, 73.50.-h, 73.50.Bk, 73.61.Ga, 81.15.-z, 81.15.Gh