ACTA

Properties of GaN Nanocolumns Grown by Plasma-Assisted MBE on Si (111) Substrates

Z.R. Zytkiewicz^a, P. Dluzewski^a, J. Borysiuk^a, M. Sobanska^a, K. Klosek^a, B.S. Witkowski^a, M. Setkiewicz^b and T. Pustelny^b
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bSilesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

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We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.

DOI: 10.12693/APhysPolA.120.A-15
PACS numbers: 81.15.Hi, 81.05.Dz, 61.46.Km