The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

M. Matysa, M. Miczeka, B. Adamowicza, Z.R. Żytkiewiczb, E. Kamińskac, A. Piotrowskac and T. Hashizumed aDepartment of Surface Physics and Nanostructures, Institute of Physics - Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland bInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland cInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland dResearch Center for Integrated Quantum Electronics, Hokkaido University, Kita-13 Nishi-8, Sapporo 060-8628, Japan

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The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from 1015 to 1019 photon cm-2 s-1) for n-GaN samples with various surface passivating layers (Al2O3, SiO2).

DOI: 10.12693/APhysPolA.120.A-73 PACS numbers: 78.55.-m, 71.35.-y, 73.20.-r, 71.55.-i, 02.70.Dh