ACTA

Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

M. Guziewicz^a, W. Jung^a, J. Grochowski^a, M. Borysiewicz^a, K. Golaszewska^a, R. Kruszka^a, A. Baranska^a, A. Piotrowska^a, B.S. Witkowski^b, J.Z. Domagala^{a, b}, M. Gryzinski^c, K. Tyminska^c and A. Stonert^d
^aInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
^bInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^cInstitute of Atomic Energy, 05-400 Otwock-Świerk, Poland
^dThe Andrzej Sołtan Institute for Nuclear Studies, Hoża 69, 00-681 Warsaw, Poland

Full Text PDF

Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using ¹³⁷Cs and ⁶⁰Co sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of 4.36 × 10¹⁶ cm^-3 to 2.86 × 10¹⁶ cm^-3 after ¹³⁷Cs γ irradiation with doses of 10 Gy. In the case of γ irradiation from ⁶⁰Co source, hole concentration of the film decreases from 6.3 × 10¹⁶/cm³ to 4.1 × 10¹⁶/cm³ and to 2.9 × 10¹⁶/cm³ after successive expositions with a dose of 20 Gy.

DOI: 10.12693/APhysPolA.120.A-69
PACS numbers: 73.61.Jc, 29.40.-n, 87.53.Bn