Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry
M. Guziewicza, W. Junga, J. Grochowskia, M. Borysiewicza, K. Golaszewskaa, R. Kruszkaa, A. Baranskaa, A. Piotrowskaa, B.S. Witkowskib, J.Z. Domagalaa, b, M. Gryzinskic, K. Tyminskac and A. Stonertd
aInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
bInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
cInstitute of Atomic Energy, 05-400 Otwock-Świerk, Poland
dThe Andrzej Sołtan Institute for Nuclear Studies, Hoża 69, 00-681 Warsaw, Poland
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Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using 137Cs and 60Co sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of 4.36 × 1016 cm-3 to 2.86 × 1016 cm-3 after 137Cs γ irradiation with doses of 10 Gy. In the case of γ irradiation from 60Co source, hole concentration of the film decreases from 6.3 × 1016/cm3 to 4.1 × 1016/cm3 and to 2.9 × 1016/cm3 after successive expositions with a dose of 20 Gy.
DOI: 10.12693/APhysPolA.120.A-69
PACS numbers: 73.61.Jc, 29.40.-n, 87.53.Bn