Effects of Ar/O2 Gas Ratio on the Properties of the Zn0.9Cd0.1O Films Prepared by DC Reactive Magnetron Sputtering
I. Shtepliuka, G. Lashkareva, V. Khomyakb, P. Marianchukb, P. Koreniukc, D. Myroniuka, V. Lazorenkoa and I. Timofeevaa
aI. Frantsevich Institute for Problems of Material Science, NASU, 03680, Kiev-142, Ukraine
bChernivtsi National University, 58012, Chernivtsi, Ukraine
cInstitute of Physics, NASU, 03028, Kiev, Ukraine
Full Text PDF
Zn0.9Cd0.1O ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of Zn0.9Cd0.1O films can be controlled by changing the gas ratio of Ar/O2. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
DOI: 10.12693/APhysPolA.120.A-61
PACS numbers: 78.55.Et, 78.67.Bf