The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
M. Alevlia, C. Ozgitb and I. Donmezb
aPhysics Department, Faculty of Arts and Sciences, Marmara University, Istanbul 34722, Turkey
bUNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
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In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia (NH3) plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100°C.
DOI: 10.12693/APhysPolA.120.A-58
PACS numbers: 81.15.Gh, 78.66.Fd, 78.55.Et