Self-Limiting Growth of GaN at Low Temperatures
C. Ozgit, I. Donmez and N. Biyikli
UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
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GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia (NH3) as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48Å/cycle were obtained within the temperature ranges of 250-350 and 150-350°C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.
DOI: 10.12693/APhysPolA.120.A-55
PACS numbers: 81.05.Ea, 81.15.Gh, 82.80.Pv