Substrate Temperature Influenced Structural and Electrical Behaviour of RF Magnetron Sputtered Ag2Cu2O3 Films |
| A. Sreedhara, M. Hari Prasad Reddya, S. Uthannaa, R. Martinsb, E. Elangovanb and J.F. Piersonc
aDepartment of Physics, Sri Venkateswara University, Tirupati - 517 502, India bCENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica, Portugal cInstitut Jean Lamour (UMR CNRS 7198), Department CP2S, Ecole des Mines, Nancy Université, 54042 Nancy cedex, France |
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| Ag2Cu2O3 films were deposited on glass and silicon substrates by RF magnetron sputtering of metallic equimolar (Ag50Cu50) alloy target in Ar-O2 mixture at different substrate temperature (Ts) ranging between 303 and 523 K. The effect of Ts on the core level binding energies, structural and electrical properties of the films was systematically studied. The films deposited at room temperature were amorphous. The films deposited at 373 K were polycrystalline and the crystallinity was increased when the Ts was increased to 423 K. The films deposited at 423 K and subsequently annealed at 498 K exhibits single phase Ag2Cu2O3. In the case of films deposited at higher Ts of 523 K, Ag2O was decomposed into Ag. The electrical resistivity of the films deposited at 303 K was 1.2 × 10-5 Ω cm, whereas the films formed at 423 K and subsequently annealed at 498 K showed electrical resistivity of 2.2 × 10-3 Ω cm due to improvement in the crystallinity of single phase Ag2Cu2O3. |
| DOI: 10.12693/APhysPolA.120.A-37 PACS numbers: 71.20.-b, 71.15.Mb, 78.20.Ci, 74.25.Gz |