Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
Ł. Wachnickia, A. Dużyńskaa, J.Z. Domagalaa, B.S. Witkowskia, T.A. Krajewskia, E. Przeździeckaa, M. Guziewiczb, A. Wierzbickaa, K. Kopalkoa, S. Figgec, D. Hommelc, M. Godlewskia, d and E. Guziewicza
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
bInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
cInstitute of Solid State Physics, University of Bremen, Kufsteiner Str. 1, Bremen 28359, Germany
dCollege of Science, Department of Mathematics and Natural Sciences, Cardinal Stefan Wyszynski University, Warsaw, Poland
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Monocrystalline films of zinc oxide were grown at 300°C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and Al2O3. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
DOI: 10.12693/APhysPolA.120.A-7
PACS numbers: 81.15.Aa, 61.05.cp, 81.05.Dz