Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes
M. Bajdaa, b, W. Trzeciakowskib and J.A. Majewskia
aInstitute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
bInstitute of High Pressure Physics Unipress, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
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We present results of theoretical studies of external tuning for laser diodes based on InGaAsP/InP heterostructures at temperatures from 300 K down to 80 K and at hydrostatic pressures up to 2.27 GPa. The tuning range achieved by pressure and grating was 390 nm (from 1220 nm to 1610 nm). At lower temperatures the tuning range achieved with grating was significantly reduced. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.
DOI: 10.12693/APhysPolA.120.852
PACS numbers: 42.55.Px, 85.60.Jb