Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors |
| N.S. Yurtsenyuk, L.A. Kosyachenko, V.M. Sklyarchuk, O.L. Maslyanchuk, O.F. Sklyarchuk and E.V. Grushko
Optoelectronics Department, Chernivtsi National University, 58012 Chernivtsi, Ukraine |
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| The electrical properties of single Cd1 - xMnxTe (x= 0.07 - 0.39) crystals with a resistivity of ≈ 108 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found. |
| DOI: 10.12693/APhysPolA.120.957 PACS numbers: 72.20.Fr, 72.80.Ey, 78.20.Ci |