Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures |
| I. Grigelionis a, K. Fobelets b, B. Vincent c, J. Mitard c, B. De Jaeger c, E. Simoen c, T.Y. Hoffman c, D. Yavorskiy a and J. Łusakowski a
aInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland bImperial College London, Exhibition Road, SW7 2BT London, UK cIMEC, Kapeldreef 75, 3001 Leuven, Belgium |
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| We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization (VG). Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to VG. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic μ(VG) dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures. |
| DOI: 10.12693/APhysPolA.120.933 PACS numbers: 72.20.My, 85.30.Tv |