ACTA

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

H. Videlier^a, N. Dyakonova^a, F. Teppe^a, C. Consejo^a, B. Chenaud^a, W. Knap^a, J. Lusakowski^b, D. Tomaszewski^c, J. Marczewski^c and P. Grabiec^c

^aGES-UMR5650, Université Montpellier 2 and CNRS, 34095 Montpellier, France
^bInstitute of Experimental Physics, Warsaw University, Warsaw, Poland
^cInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

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We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

DOI: 10.12693/APhysPolA.120.927
PACS numbers: 85.30.Tv