ACTA

Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition

M.I. Łukasiewicz^a, A. Cabaj^b, M. Godlewski^{a, b}, E. Guziewicz^a, A. Wittlin^a, M. Jaworski^a, A. Wołoś^a and Z. Wilamowski^{a, c}

^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bDept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
^cFaculty of Mathematics and Computer Sciences, UWM, Olsztyn, Poland

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Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform: films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.

DOI: 10.12693/APhysPolA.120.911
PACS numbers: 68.55.Ln, 68.55.Nq, 78.66.Hf, 81.15.Kk