Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method

Ł. Wachnickia, B.S. Witkowskia, S. Gierałtowskaa, K. Kopalkoa, M. Godlewskia, b and E. Guziewicza aPolish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warsaw, Poland bCardinal Stefan Wyszyński University, College of Science, Department of Mathematics, and Natural Sciences, Warsaw, Poland

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Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form: of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.

DOI: 10.12693/APhysPolA.120.905 PACS numbers: 81.07.Bc, 82.47.Rs, 68.55.-a, 81.15.Aa