Characterization of New Structure for Silicon Carbide X-Ray Detector by Method Monte Carlo
S.J. Stankovica, R.D. Ilica, K.S. Jankovicb, A.Vasic-Milovanovicc, B. Loncard
aVinĨa Institute of Nuclear Sciences, Belgrade, Serbia
bInstitute for testing materials-IMS, Belgrade, Serbia
cFaculty of Mechanical Engineering, University of Belgrade, Belgrade, Serbia
dFaculty of Technology and Metallurgy, University of Belgrade, Belgrade, Serbia
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This work presents a characterization of radiation absorption properties of silicon carbide (SiC) as semiconductor for the realization of detectors for X-rays. SiC detectors can potentially reach superior performance with respect to all the other semiconductors presently employed in hazardous environments in nuclear and space science and technology. Physics and numerical modeling of photons transport through SiC detector is incorporated in non-destructive Monte Carlo method for determining the energy deposited and dose distribution. The Monte Carlo code has been adopted for numerical simulations for different detector conditions and configurations. The X-ray characterization of new SiC structures originates the improving of design of these detector systems.
DOI: 10.12693/APhysPolA.120.252
PACS numbers: 07.85.Fv,, 85.30.Kk, 61.72.uf, 77.84.Bw