Nanocrystal- and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals
F. Komarova, L. Vlasukovaa, O. Milchanina, A. Mudryib, J. Zukc, K. Pyszniakc and M. Kulikc
aBelarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
bScientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki Str. 17, 220072 Minsk, Belarus
cInstitute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
Full Text PDF
We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to H2+ ions (100 keV, 1.2 × 1016 cm-2 in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form: InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
DOI: 10.12693/APhysPolA.120.204
PACS numbers: 78.66.-w, 78.60.Fi