Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

A. Misiuka, W. Wierzchowskib, K. Wieteskac, A. Barcza, d, J. Bak-Misiukd, L. Chowe, R. Vanfleetf and M. Prujszczyka aInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland bInstitute of Electronic Materials Technology, 01-919 Warsaw, Poland cInstitute of Atomic Energy POLATOM, 05-400 Otwock-Świerk, Poland dInstitute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland eUniversity of Central Florida, Orlando, FL 32816, USA fDepartment of Physics, Brigham Young University, Provo, Utah, 84604, USA

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It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using V+ doses, D = (1-5) × 1015 cm-2, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of VSi2 are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of V+ and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.

DOI: 10.12693/APhysPolA.120.196 PACS numbers: 61.72.Dd, 61.72.uf, 64.75.Qr, 66.30.Xj, 81.40.Xj