ACTA

Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide

M. Rawski^a, J. Żuk^a, M. Kulik^a, A. Droździel^a, L. Lin^b, S. Prucnal^{a, b}, K. Pyszniak^a and M. Turek^a
^aInstitute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland
^bInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

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Remarkable thermo-mechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C Al⁺ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.

DOI: 10.12693/APhysPolA.120.192
PACS numbers: 61.72.U-, 78.30.-j, 61.05.Np, 63.50.-x, 79.20.Rf, 81.70.Fy