RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN

K. Pągowskaa, R. Ratajczaka, A. Stonerta, A. Turosa, b, L. Nowickia, N. Sathisha, b, P. Jóźwika,b and A. Muecklichc aSołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland cHelmholtz-Zentrum Dresden-Rossendorf, POB 510119, D-01314 Dresden, Germany

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A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × 1012 to 1 × 1017 at./cm2. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 MeV4He beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version: of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.

DOI: 10.12693/APhysPolA.120.153 PACS numbers: 61.82.Fk, 61.85.+p, 68.55.Ln, 68.35.Dv