Defect Transformations in Ion Bombarded InGaAsP

R. Ratajczaka, A. Turosa, b, A. Stonerta, L. Nowickia and W. Strupińskib aSołtan Institute of Nuclear Studies, 05-400 Otwock/Świerk, Poland bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV 4He ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × 1012 to 6 × 1014 at./cm2. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.

DOI: 10.12693/APhysPolA.120.136 PACS numbers: 61.43.-j, 61.72.-y, 81.05.-t, 82.80.-d, 85.40.-e