Magnetoresistance in n-Si/SiO2/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology |
| J. Fedotovaa, D. Ivanoub, Y. Ivanovab, A. Fedotovb, A. Mazanikb, I. Svitob, E. Streltsovb, A. Saadc, S. Tyutyunnikovd, T.N. Kołtunowicze, S. Demyanovf and V. Fedotovaf
aNational Center of Particles and High Energy Physics of BSU, 153 Bogdanovich, 220040 Minsk, Belarus bBelarussian State University, 4 Independence, 220030 Minsk, Belarus cAl-Balqa Applied University, P.O. Box 2041, Amman 11953, Salt, Jordan dJoint Institute for Nuclear Research, 6 Joliot-Curie, 141980 Dubna, Russia eLublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland fScientific-Practical Material Research Centre NAS of Belarus, 19 P. Brovka, 220072, Minsk, Belarus |
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| A study of magnetotransport in the n-Si/SiO2/Ni nanostructures with granular Ni nanorods in SiO2 pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/SiO2/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism. |
| DOI: 10.12693/APhysPolA.120.133 PACS numbers: 68.55.Ln, 81.05.Rm, 73.22.-f, 73.50.Jt |