Formation of Submicron n+-Layers in Silicon Implanted with H+-Ions

Y.M. Pokotiloa, A.N. Petukha, A.V. Giroa and P. Węgierekb aBelarussian State University, 4 Pr. Nezavisimosti, Minsk, Belarus bLublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

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Formation of submicron n+-layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450°C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of n+-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy ΔE1 = 2.3 eV, the pre-exponential factor τ01 = 9.1 × 10-17 s, the ultimate concentration N01 = (1 ± 0.1) × 1016 cm-3; ΔE2 = 1.4 eV, τ02 = 4.2 × 10-9 s, N02 = (3 ± 0.1) × 1016 cm-3. Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.

DOI: 10.12693/APhysPolA.120.129 PACS numbers: 61.80.Jh, 81.05.Cy, 81.40.Wx