ACTA

Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with H⁺ Ions

P. Żukowski^a, P. Węgierek^a, P. Billewicz^a, T.N. Kołtunowicz^a, and F. Komarov^b
^aLublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
^bBelarussian State University, Minsk, Belarus

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The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with H⁺ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ (T_p, f) result from a jump mechanism of electric charge transfer between the radiation defects that form: in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ (T_p, f) have also been discussed.

DOI: 10.12693/APhysPolA.120.125
PACS numbers: 61.72.uj, 61.72.Cc, 72.80.Ey