Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p+n-Diodes

N.A. Poklonskia, N.I. Gorbachuka, M.I. Tarasika, S.V. Shpakovskib, V.A. Filipeniab, V.A. Skuratovc, A. Wieckd and T.N. Kołtunowicze aBelarussian State University, 4 Nezavisimosti, BY-220030, Minsk, Belarus bJSK Integral, 12 Korzhenevskogo, BY-220108 Minsk, Belarus cJoint Institute for Nuclear Research, 6 Joliot-Curie, RU-141980 Dubna, Russia dRuhr-Universität Bochum, 150 Universitätsstr., D-44780 Bochum, Germany eLublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

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The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p+-region of diodes (energy 107 MeV, fluence Φp from 5 × 107 to 4 × 109 cm-2). It is shown that recovery charge Qrr is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge QrrA, due to the high reverse conductance phase, decreases faster than the value Qrr.

DOI: 10.12693/APhysPolA.120.111 PACS numbers: 72.20.Jv, 61.80.Fe