ACTA

Influence of Annealing on the Electrical Properties of Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment

A. Fedotov^a, O. Korolik^a, A. Mazanik^a, T. Kołtunowicz^b and P. Żukowski^b
^aBelarussian State University, 4, Nezavisimosti St., 220030 Minsk, Belarus
^bLublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

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The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermo-electro-motive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.

DOI: 10.12693/APhysPolA.120.108
PACS numbers: 61.72.uf, 81.40.Ef