Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

F. Komarova, L. Vlasukovaa, O. Milchanina, A. Mudryib, B.S. Dunetza, W. Weschc, E. Wendlerc and C. Karwatd aBelarussian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus bScientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki 17, 220072 Minsk, Belarus cInstitut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany dTechnical University of Lublin, Nadbystrzycka 38A, 20-618 Lublin, Poland

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We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.

DOI: 10.12693/APhysPolA.120.87 PACS numbers: 61.80.-x, 61.72.Ff, 63.20.-e, 78.66.-w