ACTA

Structure and Electron-Transport Properties of Photoresist Implanted by Sb⁺ Ions

N. Vabishchevich^b, D. Brinkevich^a, V. Volobuev^a, M. Lukashevich^a, V. Prosolovich^a, Yu. Sidorenko^a, V. Odzhaev^a and J. Partyka^c
^aBelarussian State University, Nezavisimosti ave. 4, Minsk-220050, Belarus
^bPolotski State University, Blohina str. 29, Novopolotsk-211440, Belarus
^cLublin University of Technology, Nadbystrzycka 38D, 20-618 Lublin, Poland

Full Text PDF

Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10¹⁵ ÷ 5 × 10¹⁶ cm^-2 with the ion current density 4 μA/cm² have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.

DOI: 10.12693/APhysPolA.120.46
PACS numbers: 85.40.Hp