Electronic and Photovoltaic Properties of p-Si/PCBM:MEH-PPV Organic-Inorganic Hybrid Photodiode
F. Yakuphanoglua, b and W.A. Farooqb
aPhysics Department, Faculty of Science, Firat University, Elazig, Turkey
bDepartment of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia
Received: August 10, 2010; in final form: January 25, 2011
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The photovoltaic and electronic properties of p-Si/poly[2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV):[6, 6]-phenyl C61-butyric acid methyl ester (PCBM) organic-inorganic device have been investigated. The current-voltage characteristic of p-Si/PCBM:MEH-PPV photodiode includes series resistance effect and the diode indicates a non-ideal behavior. The photovoltaic effect in p-Si/PCBM:MEH-PPV photodiode is based on the formation of excitons and subsequent dissociation and charge collection at the electrodes. It is evaluated that p-Si/PCBM:MEH-PPV device is a photodiode with Voc of 84 mV and Isc of 3.47 nA electronic parameters.
DOI: 10.12693/APhysPolA.119.890
PACS numbers: 85.30.Kk, 88.40.jr