Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
M.S. Kima, S.-M. Jinb, H.Y. Choia, G.S. Kima, K.G. Yima, S. Kimc, G. Namc, H.S. Yoonc, Y. Kima, D.-Y. Leed, Jin S. Kimc, Jong S. Kimf and J.-Y. Leema,b
aDepartment of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea
bInk Technology Center, Ink Tec. Co. Ltd., Pyeongtaek 451-821, Republic of Korea
cSchool of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea
dEpi-manufacturing Technology, Samsung LED Co., Ltd., Suwon 443-373, Republic of Korea
eDivision of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea
fDepartment of Physics, Yeungnam University, Gyeongsan 712-749, Republic of Korea
Received: December 23, 2010
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A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × 1019 cm-3 was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
DOI: 10.12693/APhysPolA.119.875
PACS numbers: 73.61.Ey, 81.15.Gh