ACTA

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

S. Lewińska^a, M. Gryglas-Borysiewicz^a, J. Przybytek^a, M. Baj^a, B. Jouault^{b, c}, U. Gennser^d and A. Ouerghi^d
^aInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
^bGroupe d'Etude des Semiconducteurs, Université Montpellier 2, Montpellier, France
^cCNRS, UMR 5650, cc074, pl. Eugène Bataillon, 34095 Montpellier Cedex 5, France
^dLaboratoire de Photonique et Nanostructures, CNRS, Marcoussis, France

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Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

DOI: 10.12693/APhysPolA.119.606
PACS numbers: 73.61.-r, 71.20.Nr, 73.23.Hk, 73.63.Hs, 72.10.Di, 85.30.Mn, 73.40.Gk