Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
S. Lewińskaa, M. Gryglas-Borysiewicza, J. Przybyteka, M. Baja, B. Jouaultb, c, U. Gennserd and A. Ouerghid
aInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
bGroupe d'Etude des Semiconducteurs, Université Montpellier 2, Montpellier, France
cCNRS, UMR 5650, cc074, pl. Eugène Bataillon, 34095 Montpellier Cedex 5, France
dLaboratoire de Photonique et Nanostructures, CNRS, Marcoussis, France
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Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
DOI: 10.12693/APhysPolA.119.606
PACS numbers: 73.61.-r, 71.20.Nr, 73.23.Hk, 73.63.Hs, 72.10.Di, 85.30.Mn, 73.40.Gk