Raman Studies of Defects in Graphene Grown on SiC |
| K. Grodeckia,b, R. Bożekb, J. Borysiukb, c, W. Strupinskia, A. Wysmolekb, R. Stępniewskib and J.M. Baranowskia, b
aInstitute of Electronic Material Technology, Wólczyńska 133, 01-919 Warsaw, Poland bInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland cInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland |
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| The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The obtained estimates were compared with flake sizes from atomic force microscopy data. We found that even the smallest structures observed by atomic force microscopy images are much bigger than the estimates obtained from the Raman scattering data. The obtained results are discussed in terms of different average flake sizes inside and on the surface of the multi-layer graphene structure, as well as different type of defects which would be present in the investigated structures apart from edge defects. |
| DOI: 10.12693/APhysPolA.119.595 PACS numbers: 61.48.Gh, 78.30.Fs |