Detector with High Internal Photocurrent Gain Based on ZnO:N

L.A. Kosyachenkoa, G.V. Lashkarevb, A.I. Ievtushenkob, V.I. Lazorenkob, V.M. Sklyarchuka and O.F. Sklyarchuka aChernivtsi National University, 58012 Chernivtsi, Ukraine bInstitute for Problems of Material Science, NASU, 03142 Kiev, Ukraine

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The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.

DOI: 10.12693/APhysPolA.119.681 PACS numbers: 81.05.Dz, 81.15.-z, 85.60.Dw