Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration |
| S. Grzankaa, b, G. Łukac, T.A. Krajewskic, E. Guziewiczc, R. Jachymekb, W. Purgala, R. Wiśniewskab, A. Sarzyńskab, A. Bering-Staniszewskab, M. Godlewskic, d and P. Perlina, b
aTopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland bInstitute of High Pressure Physics, Sokołowska 29/37, 01-142 Warsaw, Poland cInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland dDepartment of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland |
| Full Text PDF |
| Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form: a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 1017 cm-3. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 1020 cm-3. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10-3 Ω cm2. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology. |
| DOI: 10.12693/APhysPolA.119.672 PACS numbers: 72.80.Ey, 73.40.Kp, 73.40.Lq |