Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1-xN Quantum Wells

W. Bardyszewski a, S.P. Łepkowski b and H. Teisseyreb,c aInstitute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland bInstitute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland cInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

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We present a theoretical study of excitons in GaN/AlxGa1-xN wurtzite (0001) quantum wells subjected to hydrostatic pressure. Our results show that the combined effect of pressure induced changes in band structure and piezoelectric field leads to reduction of the exciton binding energy. This subtle effect is described quite accurately by our multiband model of excitons in quantum wells.

DOI: 10.12693/APhysPolA.119.663 PACS numbers: 78.40.Fy, 78.20.Bh, 78.30.Fs