Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM |
| F. Ivaldi, S. Kret, A. Szczepańska
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland R. Czernecki, M. Kryśko, S. Grzanka and M. Leszczyński Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland |
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| Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample. |
| DOI: 10.12693/APhysPolA.119.660 PACS numbers: 68.35.bg, 68.37.Lp, 68.65.Fg |