Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells |
| K. Zieleniewski, K. Pakuła, R. Bożek, K. Masztalerz, A. Wysmołek and R. Stępniewski
Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland |
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| We report studies on electric field built in GaN/Al0.09Ga0.91N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible and mid infra-red interference pattern along the sample, the layer thickness and consequently the quantum well width was determined to vary linearly with the position. Secondly, photo-luminescence spectra was taken at different positions. Correlation of those two measurements allows us to determine the built-in electric field to be 0.66 MV/cm, which is considerably larger than previously reported for similar structures. |
| DOI: 10.12693/APhysPolA.119.657 PACS numbers: 78.55.Cr, 78.67.De, 77.55.hn, 81.15.Gh |